Srabanti Chowdhury

Orcid: 0000-0001-8367-0461

According to our database1, Srabanti Chowdhury authored at least 11 papers between 2019 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2023
Thermal Scaffolding for Ultra-Dense 3D Integrated Circuits.
Proceedings of the 60th ACM/IEEE Design Automation Conference, 2023

On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2023

2022
Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress.
Proceedings of the Device Research Conference, 2022

2021
Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management.
Proceedings of the Device Research Conference, 2021

2020
Robust avalanche in GaN leading to record performance in avalanche photodiode.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature.
Proceedings of the 2020 Device Research Conference, 2020

Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode.
Proceedings of the 2020 Device Research Conference, 2020

2019
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width.
Proceedings of the Device Research Conference, 2019


  Loading...