Maria Ruzzarin

According to our database, Maria Ruzzarin authored at least 5 papers between 2016 and 2019.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2019

Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).

Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments.

Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2018

Positive and negative threshold voltage instabilities in GaN-based transistors.

Gaudenzio Meneghesso, Matteo Meneghini, Carlo De Santi, Maria Ruzzarin, Enrico Zanoni

Microelectron. Reliab., 2018

Degradation of vertical GaN FETs under gate and drain stress.

Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2016

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.

Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2016