Taiichi Otsuji

Orcid: 0000-0002-0887-0479

According to our database1, Taiichi Otsuji authored at least 28 papers between 1988 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Awards

IEEE Fellow

IEEE Fellow 2014, "For contributions to plasmonic semiconductor integrated device technology for terahertz sensing".

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
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Links

Online presence:

On csauthors.net:

Bibliography

2023
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2023

2021
Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications.
Sensors, 2021

Concept of Resilient Electric Power and Information Communication Technology (R-EICT) Converged Network Systems Based on Overall Optimization of Autonomous Decentralized Cooperative Control of DC Microgrids.
Proceedings of the IEEE Power & Energy Society Innovative Smart Grid Technologies Conference, 2021

Fast terahertz detection by asymmetric dual-grating-gate graphene FET.
Proceedings of the Device Research Conference, 2021

2019
UTC-PD-Integrated HEMT for Optical-to-Millimeter-Wave Carrier Frequency Down-Conversion.
Proceedings of the Optical Fiber Communications Conference and Exhibition, 2019

2018
Graphene-Channel-Transistor Terahertz Amplifier.
Proceedings of the 76th Device Research Conference, 2018

2015
Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network.
Proceedings of the European Conference on Optical Communication, 2015

2013
High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique.
Proc. IEEE, 2013

Site-Selective Epitaxy of Graphene on Si Wafers.
Proc. IEEE, 2013

Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs.
Proceedings of the European Solid-State Device Research Conference, 2013

Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band.
Proceedings of the European Solid-State Device Research Conference, 2013

2010
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems.
IEICE Trans. Electron., 2010

2009
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter.
IEICE Trans. Electron., 2009

2007
Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer.
IEICE Trans. Electron., 2007

2006
Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer.
IEICE Trans. Electron., 2006

Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer.
IEICE Trans. Electron., 2006

2001
An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode.
IEEE J. Solid State Circuits, 2001

2000
A distributed selector IC using GaAs MESFET's with multilayer-interconnection structure.
IEEE J. Solid State Circuits, 2000

1999
40-Gbit/s TDM transmission technologies based on ultra-high-speed ICs.
IEEE J. Solid State Circuits, 1999

Circuit design technologies for high-speed lightwave communications beyond 40 Gbit/s.
Proceedings of the 1999 International Symposium on Circuits and Systems, ISCAS 1999, Orlando, Florida, USA, May 30, 1999

1998
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs.
IEEE J. Solid State Circuits, 1998

A 40-Gbit/s superdynamic decision IC fabricated with 0.12-μm GaAs MESFET's.
IEEE J. Solid State Circuits, 1998

High-speed GaAs MESFET Digital IC Design for Optical Communication Systems.
Proceedings of the ASP-DAC '98, 1998

1997
A super-dynamic flip-flop circuit for broad-band applications up to 24 Gb/s utilizing production-level 0.2-μm GaAs MESFETs.
IEEE J. Solid State Circuits, 1997

40-Gb/s ICs for future lightwave communications systems.
IEEE J. Solid State Circuits, 1997

1995
A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-μm GaAs MESFET.
IEEE J. Solid State Circuits, October, 1995

1991
A Picosecond Accuracy Timing Error Compensation Technique in TDR Measurement.
Proceedings of the Proceedings IEEE International Test Conference 1991, 1991

1988
Key Technologies for 500 MHz VLSI Test System "ULTIMATE".
Proceedings of the Proceedings International Test Conference 1988, 1988


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