Hiroki Sugiyama
Orcid: 0000-0002-6301-857X
According to our database1,
Hiroki Sugiyama
authored at least 17 papers
between 1999 and 2020.
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Bibliography
2020
IEEE J. Solid State Circuits, 2020
230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2020
2019
300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology.
Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019
Realization and Preliminary Evaluation of MPI Runtime Environment on Android Cluster.
Proceedings of the Advanced Information Networking and Applications, 2019
2018
Proceedings of the Photonics in Switching and Computing, 2018
2015
Proceedings of the 10th International Conference on Broadband and Wireless Computing, 2015
2014
Exploiting Guest Preferences with Aspect-based Sentiment Analysis for Hotel Recommendation.
Proceedings of the Knowledge Discovery, Knowledge Engineering and Knowledge Management, 2014
Incorporating Guest Preferences into Collaborative Filtering for Hotel Recommendation.
Proceedings of the KDIR 2014 - Proceedings of the International Conference on Knowledge Discovery and Information Retrieval, Rome, Italy, 21, 2014
2013
A parallel-to-serial converter based on a differentially-operated optically clocked transistor array.
IEICE Electron. Express, 2013
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band.
Proceedings of the European Solid-State Device Research Conference, 2013
2012
Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers.
IEICE Trans. Electron., 2012
Beating Analysis of Shubnikov de Haas Oscillation in In<sub>0.53</sub>Ga<sub>0.47</sub>As Double Quantum Well toward Spin Filter Applications.
IEICE Trans. Electron., 2012
Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay.
IEICE Electron. Express, 2012
2009
IEICE Electron. Express, 2009
2004
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors.
IEICE Electron. Express, 2004
2002
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs.
Microelectron. Reliab., 2002
1999
Proceedings of the 1999 International Symposium on Circuits and Systems, ISCAS 1999, Orlando, Florida, USA, May 30, 1999