Tongde Li

According to our database, Tongde Li authored at least 3 papers between 2017 and 2021.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2021

Radiation Hardened 12T SRAM With Crossbar-Based Peripheral Circuit in 28nm CMOS Technology.

Yuanyuan Han, Tongde Li, Xu Cheng, Liang Wang, Jun Han, Yuanfu Zhao, Xiaoyang Zeng

IEEE Trans. Circuits Syst. I Regul. Pap., 2021

2020

A Robust Hardened Latch Featuring Tolerance to Double-Node-Upset in 28nm CMOS for Spaceborne Application.

Yan Li, Xu Cheng, Chiyu Tan, Jun Han, Yuanfu Zhao, Liang Wang, Tongde Li, Mehdi B. Tahoori, Xiaoyang Zeng

IEEE Trans. Circuits Syst. II Express Briefs, 2020

2017

High energy proton and heavy ion induced single event transient in 65-nm CMOS technology.

Jiaqi Liu, Yuanfu Zhao, Liang Wang, Dan Wang, Hongchao Zheng, Maoxin Chen, Lei Shu, Tongde Li, Dongqiang Li, Wei Guo

Sci. China Inf. Sci., 2017