Yan Han
Affiliations:- Zhejiang University, ESD Lab, Department of Information Science and Electronic Engineering (ISEE), Hangzhou, China
According to our database1,
Yan Han authored at least 23 papers
between 2008 and 2023.
Collaborative distances:
Collaborative distances:
Timeline
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Bibliography
2023
IEICE Trans. Electron., July, 2023
2018
Neural Comput., 2018
2017
Sci. China Inf. Sci., 2017
Proceedings of the International SoC Design Conference, 2017
2016
Very small snapback silicon-controlled rectifier for electrostatic discharge protection in 28 nm processing.
Microelectron. Reliab., 2016
2015
A high-efficiency full-wave CMOS rectifying charge pump for RF energy harvesting applications.
Microelectron. J., 2015
2014
An area-efficient LDMOS-SCR ESD protection device for the I/O of power IC application.
Microelectron. Reliab., 2014
Temperature dependences of threshold voltage and drain-induced barrier lowering in 60 nm gate length MOS transistors.
Microelectron. Reliab., 2014
A perfectly current matched charge pump with wide dynamic range for ultra low voltage applications.
IEICE Electron. Express, 2014
Sci. China Inf. Sci., 2014
2013
IEEE J. Solid State Circuits, 2013
J. Circuits Syst. Comput., 2013
A customizable Stochastic State Point Process Filter (SSPPF) for neural spiking activity.
Proceedings of the 35th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, 2013
2012
Microelectron. Reliab., 2012
Microelectron. Reliab., 2012
Subthreshold CMOS voltage reference circuit with body bias compensation for process variation.
IET Circuits Devices Syst., 2012
2011
Microelectron. Reliab., 2011
Microelectron. Reliab., 2011
2010
IEEE Trans. Consumer Electron., 2010
Microelectron. Reliab., 2010
2008
Evaluation of RF electrostatic discharge (ESD) protection in 0.18-µm CMOS technology.
Microelectron. Reliab., 2008