Zihan Wu
Orcid: 0000-0002-9328-2670Affiliations:
- Fudan University, State Key Laboratory of ASIC & System, Shanghai, China
According to our database1,
Zihan Wu authored at least 13 papers
between 2021 and 2026.
Collaborative distances:
Collaborative distances:
Timeline
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Bibliography
2026
SKADI: A 28-nm Complete K-SAT Solver Featuring Bidirectional In-Memory Deduction and Incremental Updating.
IEEE J. Solid State Circuits, May, 2026
A 1131-kb/mm<sup>2</sup> 14.0-to-53.3-TOPS/W 8-bit Analog-Assisted Digital Compute-in-Memory With Hybrid Local-Refresh eDRAM for Attention Computing.
IEEE J. Solid State Circuits, March, 2026
A 28nm Mode-Reconfigurable CAM-CIM Hybrid Complete 3-SAT Solver Supporting Conflict-Driven Clause Learning with 100% Solvability.
Proceedings of the IEEE International Solid-State Circuits Conference, 2026
A 28-nm CIM-Based Annealing Processor with One-Shot Weight Access, Dynamic Batching, and Bubble-Less Pipeline for Large-Scale Path Planning Problems.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2026
A Multiscale Neural Interface SoC with 89.5-dB DR 4.54μW Analog Frontend and 0.00013 mm<sup>2</sup>/Ch Spatiotemporal Spike Feature Extractor.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2026
2025
A -31 dBm Sensitivity High-Efficiency RF Energy Harvesting System With Burst Charging Mode for IoT Applications.
IEEE Trans. Circuits Syst. I Regul. Pap., July, 2025
A Variation-Tolerant Continuous-Time Ising Machine With eDRAM-Based Spin Interaction and Leaked Negative Feedback Annealing.
IEEE J. Solid State Circuits, May, 2025
37.5 SKADI: A 28nm Complete K-SAT Solver Featuring Dual-Path SRAM-Based Macro and Incremental Update with 100% Solvability.
Proceedings of the IEEE International Solid-State Circuits Conference, 2025
2024
Co-Design of an Auxiliary Self-Bias Module and a CMOS Rectifier for RF Energy Harvesting.
IEEE Trans. Circuits Syst. II Express Briefs, March, 2024
A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM.
IEEE J. Solid State Circuits, March, 2024
30.5 A Variation-Tolerant In-eDRAM Continuous-Time Ising Machine Featuring 15-Level Coefficients and Leaked Negative-Feedback Annealing.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
Proceedings of the IEEE International Conference on RFID, 2023
2021
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021