Zixuan Sun

According to our database, Zixuan Sun authored at least 5 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM.

Jiahao Song, Xiyuan Tang, Haoyang Luo, Haoyi Zhang, Xin Qiao, Zixuan Sun, Xiangxing Yang, Zihan Wu, Yuan Wang, Runsheng Wang, Ru Huang

IEEE J. Solid State Circuits, March, 2024

2023

Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence.

Zuoyuan Dong, Zixuan Sun, Xin Yang, Xiaomei Li, Yongkang Xue, Chen Luo, Puyang Cai, Zirui Wang, Shuying Wang, Yewei Zhang, Chaolun Wang, Pengpeng Ren, Zhigang Ji, Xing Wu, Runsheng Wang, Ru Huang

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation.

Longda Zhou, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology.

Zixuan Sun, Haoran Lu, Yongkang Xue, Wenpu Luo, Zirui Wang, Jiayang Zhang, Zhigang Ji, Runsheng Wang, Ru Huang

Proceedings of the IEEE International Reliability Physics Symposium, 2023

A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC.

Jiahao Song, Xiyuan Tang, Haoyang Luo, Haoyi Zhang, Xin Qiao, Zixuan Sun, Xiangxing Yang, Yuan Wang, Runsheng Wang, Ru Huang

Proceedings of the IEEE Custom Integrated Circuits Conference, 2023