Nathalie Revil

According to our database, Nathalie Revil authored at least 8 papers between 2001 and 2009.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2009

0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications.

Grégory Avenier, Malick Diop, Pascal Chevalier, Germaine Troillard, Nicolas Loubet, Julien Bouvier, Linda Depoyan, Nicolas Derrier, Michel Buczko, Cédric Leyris, Samuel Boret, Sébastien Montusclat, Alain Margain, Sébastien Pruvost, Sean T. Nicolson, Kenneth H. K. Yau, Nathalie Revil, Daniel Gloria, Didier Dutartre, Sorin P. Voinigescu, Alain Chantre

IEEE J. Solid State Circuits, 2009

2008

Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride.

Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo

Microelectron. Reliab., 2008

2005

A thorough investigation of MOSFETs NBTI degradation.

Vincent Huard, M. Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent

Microelectron. Reliab., 2005

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.

Alain Bravaix, Didier Goguenheim, M. Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2005

2004

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.

Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2004

2003

Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.

Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2003

2001

Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications.

Nathalie Revil, Xavier Garros

Microelectron. Reliab., 2001

Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.

Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent

Microelectron. Reliab., 2001