Steve Stoffels

Orcid: 0000-0003-1748-688X

According to our database1, Steve Stoffels authored at least 13 papers between 2012 and 2019.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

Online presence:

On csauthors.net:

Bibliography

2019
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process.
IEICE Electron. Express, 2019

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.
Microelectron. Reliab., 2018

2017
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.
Microelectron. Reliab., 2017

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation.
Microelectron. Reliab., 2017

2016
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.
Microelectron. Reliab., 2016

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.
Microelectron. Reliab., 2016

New fast distributed thermal model for analysis of GaN based power devices.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress.
Microelectron. Reliab., 2014

Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes.
Microelectron. Reliab., 2014

Breakdown investigation in GaN-based MIS-HEMT devices.
Proceedings of the 44th European Solid State Device Research Conference, 2014

2012
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop.
Microelectron. Reliab., 2012


  Loading...