Steve Stoffels
Orcid: 0000-0003-1748-688X
According to our database1,
Steve Stoffels
authored at least 13 papers
between 2012 and 2019.
Collaborative distances:
Collaborative distances:
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Bibliography
2019
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process.
IEICE Electron. Express, 2019
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2018
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.
Microelectron. Reliab., 2018
2017
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.
Microelectron. Reliab., 2017
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation.
Microelectron. Reliab., 2017
2016
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.
Microelectron. Reliab., 2016
Microelectron. Reliab., 2016
Proceedings of the 46th European Solid-State Device Research Conference, 2016
2015
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015
2014
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress.
Microelectron. Reliab., 2014
Microelectron. Reliab., 2014
Proceedings of the 44th European Solid State Device Research Conference, 2014
2012
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop.
Microelectron. Reliab., 2012