Chan-Kyoung Kim

Affiliations:

Samsung Electronics, Hwasung, Korea

According to our database¹, Chan-Kyoung Kim authored at least 2 papers between 2005 and 2006.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of four.

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Bibliography

2006

A 20-gb/s 256-mb DRAM with an inductorless quadrature PLL and a cascaded pre-emphasis transmitter.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2006

2005

A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2005

Chan-Kyoung Kim

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