Woo-Seop Kim

Orcid: 0009-0008-6554-358X

According to our database1, Woo-Seop Kim authored at least 13 papers between 2002 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2023
Review of Memory RAS for Data Centers.
IEEE Access, 2023

2013
Noise immunity improvement in the RESET signal of DDR3 SDRAM memory module.
Proceedings of the 2013 IEEE International SOC Conference, Erlangen, Germany, 2013

2011

2010
A 31 ns Random Cycle VCAT-Based 4F <sup>2</sup> DRAM With Manufacturability and Enhanced Cell Efficiency.
IEEE J. Solid State Circuits, 2010

8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology.
IEEE J. Solid State Circuits, 2010

2009
BER Measurement of a 5.8-Gb/s/pin Unidirectional Differential I/O for DRAM Application With DIMM Channel.
IEEE J. Solid State Circuits, 2009


2007
An 8 Gb/s/pin 9.6 ns Row-Cycle 288 Mb Deca-Data Rate SDRAM With an I/O Error Detection Scheme.
IEEE J. Solid State Circuits, 2007

2006
A 20-gb/s 256-mb DRAM with an inductorless quadrature PLL and a cascaded pre-emphasis transmitter.
IEEE J. Solid State Circuits, 2006

An 8Gb/s/pin 9.6ns Row-Cycle 288Mb Deca-Data Rate SDRAM with an I/O Error-Detection Scheme.
Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

2005
A 4-Gb/s/pin low-power memory I/O interface using 4-level simultaneous bi-directional signaling.
IEEE J. Solid State Circuits, 2005

A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems.
IEEE J. Solid State Circuits, 2005

2002
A control network architecture based on EIA-709.1 protocol for power line data communications.
IEEE Trans. Consumer Electron., 2002


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