Dmitry Veksler

According to our database, Dmitry Veksler authored at least 8 papers between 2015 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Signal duration sensitive degradation in scaled devices.

Gennadi Bersuker, E. Tang, Dmitry Veksler

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.

James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices.

S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay K. Banerjee

Proceedings of the Device Research Conference, 2022

2021

Mitigating switching variability in carbon nanotube memristors.

James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Memory update characteristics of carbon nanotube memristors (NRAM^®) under circuitry-relevant operation conditions.

Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Switching Variability Factors in Compliance-Free Metal Oxide RRAM.

Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2015

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory.

Brian L. Ji, H. Li, Q. Ye, S. Gausepohl, S. Deora, Dmitry Veksler, S. Vivekanand, H. Chong, H. Stamper, T. Burroughs, C. Johnson, M. Smalley, S. Bennett, V. Kaushik, J. Piccirillo, M. Rodgers, M. Passaro, M. Liehr

CoRR, 2015

Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs.

G. Sereni, Luca Vandelli, Roberto Cavicchioli, Luca Larcher, Dmitry Veksler, Gennadi Bersuker

Proceedings of the IEEE International Reliability Physics Symposium, 2015