Kin P. Cheung

According to our database, Kin P. Cheung authored at least 10 papers between 2001 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

V-Ramp test and gate oxide screening under the "lucky" defect model.

Kin P. Cheung

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide.

Xiao Lyu, Pragya R. Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin P. Cheung, Shimeng Yu, Peide D. Ye

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2020

Memory update characteristics of carbon nanotube memristors (NRAM^®) under circuitry-relevant operation conditions.

Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Anomalous accelerated negative-bias- instability (NBI) at low drain bias.

Kin P. Cheung

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Switching Variability Factors in Compliance-Free Metal Oxide RRAM.

Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

SiC power MOSFET gate oxide breakdown reliability - Current status.

Kin P. Cheung

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Non-tunneling origin of the 1/f noise in SiC MOSFET.

Kin P. Cheung, Jason P. Campbell

Proceedings of the 2018 International Conference on IC Design & Technology, 2018

2011

Circuit-aware device reliability criteria methodology.

Jason T. Ryan, Lan Wei, Jason P. Campbell, Ricki G. Southwick, Kin P. Cheung, Anthony S. Oates, H.-S. Philip Wong, John Suehle

Proceedings of the 37th European Solid-State Circuits Conference, 2011

2001

Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide.

Kin P. Cheung

Microelectron. Reliab., 2001

Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models.

Kin P. Cheung

Microelectron. Reliab., 2001