Al-Moatasem El-Sayed

According to our database, Al-Moatasem El-Sayed authored at least 14 papers between 2015 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.

Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.

James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities.

Christoph Wilhelmer, Dominic Waldhoer, Markus Jech, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Michael Waltl, Tibor Grasser

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study.

Dominic Waldhoer, Bibhas Manna, Al-Moatasem Bellah El-Sayed, Theresia Knobloch, Yury Illarionov, Tibor Grasser

Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021

Mitigating switching variability in carbon nanotube memristors.

James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.

Christoph Wilhelmer, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Tibor Grasser

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.

Diego Milardovich, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Tibor Grasser

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface.

Lukas Cvitkovich, Markus Jech, Dominic Waldhör, Al-Moatasem El-Sayed, Christoph Wilhelmer, Tibor Grasser

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2020

Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k·p Study.

Viktor Sverdlov, Al-Moatasem Bellah El-Sayed, Siegfried Selberherr

Proceedings of the 27th International Conference on Mixed Design of Integrated Circuits and System, 2020

2019

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.

Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.

Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.

Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser

Microelectron. Reliab., 2018

Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films.

David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

On the volatility of oxide defects: Activation, deactivation, and transformation.

Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2015