Alexander L. Shluger

According to our database, Alexander L. Shluger authored at least 12 papers between 2010 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of three.

2023

Towards a Universal Model of Dielectric Breakdown.

Andrea Padovani, Paolo La Torraca, Jack Strand, Alexander L. Shluger, Valerio Milo, Luca Larcher

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Hydrogen Induced Dipole Layer in Pd-SiO2 Based Gas Sensors.

Idan Shem Tov, Anwesha Mukherjee, Joseph Hayon, Laura Hargreaves, Alexander L. Shluger, Yossi Rosenwaks

Proceedings of the IEEE Sensors Applications Symposium, 2022

Defining the performance of SiOx ReRAM by engineering oxide microstructure.

Anthony J. Kenyon, Adnan Mehonic, Wing H. Ng, Longfei Zhao, Horatio Cox, Mark Buckwell, Kamal Patel, Andrew P. Knights, Daniel J. Mannion, Alexander L. Shluger

Proceedings of the 11th International Conference on Modern Circuits and Systems Technologies, 2022

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.

James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents.

Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher

Proceedings of the IEEE International Memory Workshop, 2022

2021

Variability sources and reliability of 3D - FeFETs.

Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Mitigating switching variability in carbon nanotube memristors.

James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2018

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.

Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser

Microelectron. Reliab., 2018

Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films.

David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Efficient parametrization of complex molecule-surface force fields.

David Z. Gao, Filippo Federici Canova, Matthew B. Watkins, Alexander L. Shluger

J. Comput. Chem., 2015

On the volatility of oxide defects: Activation, deactivation, and transformation.

Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2010

QM/MM method for metal-organic interfaces.

Maria L. Sushko, Peter V. Sushko, Igor V. Abarenkov, Alexander L. Shluger

J. Comput. Chem., 2010