Lee Cleveland

According to our database, Lee Cleveland authored at least 7 papers between 2004 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics.

James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Mitigating switching variability in carbon nanotube memristors.

James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Development of 16 Mb NRAM Aiming for High Reliability, Small Cell Area, and High Switching Speed.

Hitoshi Saito, J. Watanabe, J. Seino, T. Tamura, N. Sashida, K. Hara, K. Kawabata, A. Fujii, J. Ohno, A. Nakakubo, M. Kojima, T. Shimoyama, H. Wada, Lee Cleveland, H. Luan, R. Sen, N. Leong, T. Gallagher, Thomas Rueckes

Proceedings of the IEEE International Memory Workshop, 2021

2020

Memory update characteristics of carbon nanotube memristors (NRAM^®) under circuitry-relevant operation conditions.

Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, Kin P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2017

NRAM status and prospects.

David C. Gilmer, Thomas Rueckes, Lee Cleveland, Darlene Viviani

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

2013

Flash storage integration in the IBM System z EC12 I/O drawer.

Edward W. Chencinski, Michael J. Anderson, Lee Cleveland, Jim Coon, David Craddock, R. E. Galbraith, Thomas A. Gregg, Thomas B. Mathias, D. F. Moertl, K. J. Oakes, M. Sabins, G. E. Sittmann, Peter G. Sutton, P. Szwed, Gary A. Tressler, Elpida Tzortzatos, Andrew Walls

IBM J. Res. Dev., 2013

2004

Virtual-ground sensing techniques for a 49-ns/200-MHz access time 1.8-V 256-Mb 2-bit-per-cell flash memory.

Binh Quang Le, Michael Achter, Chin Ghee Chng, Xin Guo, Lee Cleveland, Pau-Ling Chen, Michael Van Buskirk, Robert W. Dutton

IEEE J. Solid State Circuits, 2004