Christophe Raynaud

According to our database, Christophe Raynaud authored at least 5 papers between 2018 and 2024.

Collaborative distances:

• Dijkstra number of six.
• Erdős number of five.

2024

Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs.

Oriol Avino-Salvado, Cyril Buttay, Ferran Bonet, Christophe Raynaud, Pascal Bevilacqua, José Rebollo, Hervé Morel, Xavier Perpiñà

IEEE Trans. Ind. Electron., May, 2024

2022

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

Microelectron. J., 2022

2018

Measurement and analysis of SiC-MOSFET threshold voltage shift.

Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel

Microelectron. Reliab., 2018

Robustness study of 1700 V 45 mΩ SiC MOSFETs.

Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel

Proceedings of the IEEE International Conference on Industrial Technology, 2018

SiC lateral Schottky diode technology for integrated smart power converter.

Jean-François Mogniotte, Christophe Raynaud, Mihai Lazar, Bruno Allard, Dominique Planson

Proceedings of the IEEE International Conference on Industrial Technology, 2018