M. Tessaire

According to our database, M. Tessaire authored at least 3 papers between 2012 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate.

Gabriele Navarro, C. Sabbione, Valentina Meli, L. E. Nistor, M. Frei, Julien Garrione, M. Tessaire, F. Fillot, Nicolas Bernier, Emmanuel Nolot, Benoit Sklénard, J. Li, S. Martin, Niccolo Castellani, Guillaume Bourgeois, Marie Claire Cyrille, François Andrieu

Proceedings of the IEEE International Memory Workshop, 2022

2021

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.

Laurent Grenouillet, Niccolo Castellani, Alain Persico, Valentina Meli, S. Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, S. Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, Thomas Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, Julien Arcamone, E. Nowak

Proceedings of the IEEE International Memory Workshop, 2021

2012

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.

Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012