Alain Toffoli

According to our database, Alain Toffoli authored at least 4 papers between 2011 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2013

A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications.

Giorgio Palma, Elisa Vianello, Olivier Thomas, Houcine Oucheikh, Santhosh Onkaraiah, Alain Toffoli, Catherine Carabasse, Gabriel Molas, Barbara De Salvo

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below.

J. Mazurier, Olivier Weber, François Andrieu, Alain Toffoli, Olivier Thomas, Fabienne Allain, Jean-Philippe Noel, Marc Belleville, Olivier Faynot, T. Poiroux

J. Low Power Electron., 2012

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption.

Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, Roberto Annunziata, Gilles Reimbold, G. Pananakakis, Barbara De Salvo

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

3D monolithic integration.

Perrine Batude, Maud Vinet, Arnaud Pouydebasque, Cyrille Le Royer, Bernard Previtali, Claude Tabone, Jean-Michel Hartmann, Loic Sanchez, Laurence Baud, Veronique Carron, Alain Toffoli, Fabienne Allain, Vincent Mazzocchi, Dominique Lafond, Simon Deleonibus, Olivier Faynot

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2011), 2011