G. Van den Bosch

According to our database, G. Van den Bosch authored at least 7 papers between 2021 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Enabling 3D NAND Trench Cells for Scaled Flash Memories.

S. Rachidi, S. Ramesh, L. Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, G. Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND.

Laurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den Bosch, Jan Van Houdt, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

2022

Liquid Memory and the Future of Data Storage.

Maarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, Harold Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, G. Van den Bosch, Arnaud Furnémont

Proceedings of the IEEE International Memory Workshop, 2022

A comprehensive variability study of doped HfO2 FeFET for memory applications.

Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, G. Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2022

At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells.

S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Y. Oniki, G. Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2022

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.

L. Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. Bastos, S. Ramesh, G. Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2022

2021

First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application.

K. Banerjee, L. Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, G. Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2021