Antonio Arreghini

According to our database, Antonio Arreghini authored at least 9 papers between 2008 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

Enabling 3D NAND Trench Cells for Scaled Flash Memories.

S. Rachidi, S. Ramesh, L. Breuil, Z. Tao, Devin Verreck, G. L. Donadio, Antonio Arreghini, G. Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND.

Laurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den Bosch, Jan Van Houdt, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

2022

Liquid Memory and the Future of Data Storage.

Maarten Rosmeulen, Cesar J. Lockhart de la Rosa, K. Willems, S. Fransen, B.-Y. Shih, Devin Verreck, V. Kalangi, F. Yasin, Harold Philipsen, Y. T. Set, N. Ronchi, W. Van Roy, O. Y. F. Henry, Antonio Arreghini, G. Van den Bosch, Arnaud Furnémont

Proceedings of the IEEE International Memory Workshop, 2022

At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells.

S. Rachidi, Antonio Arreghini, Devin Verreck, G. L. Donadio, K. Banerjee, K. Katcko, Y. Oniki, G. Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2022

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.

L. Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. Bastos, S. Ramesh, G. Van den Bosch, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2022

2021

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics.

Franz Schanovsky, Devin Verreck, Antonio Arreghini, Gerhard Rzepa, Zlatan Stanojevic, Christian Kernstock, Oskar Baumgartner, Maarten Rosmeulen, Markus Karner

Proceedings of the IEEE International Memory Workshop, 2021

2019

Impact of Mechanical Stress on the Electrical Performance of 3D NAND.

Anastasiia Kruv, Antonio Arreghini, Mario Gonzalez, Devin Verreck, Geert Van den Bosch, Ingrid De Wolf, Arnaud Furnémont

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2014

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories.

Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt

Microelectron. Reliab., 2014

2008

Characterization and modeling of Non volatile memory cells based on localized trapping materials.

Antonio Arreghini

PhD thesis, 2008