Jan Van Houdt

According to our database, Jan Van Houdt authored at least 31 papers between 1998 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

Evaluating the Effects of FeFET Device Variability on Charge Sharing Based AiMC Accelerator.

Swatilekha Majumdar, Stefan Cosemans, Arindam Mallik, Peter Debacker, Francky Catthoor, Jan Van Houdt

Proceedings of the IEEE International Symposium on Circuits and Systems, 2023

Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering.

Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2023

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NAND.

Laurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den Bosch, Jan Van Houdt, Maarten Rosmeulen

Proceedings of the IEEE International Memory Workshop, 2023

Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconate.

Mihaela Ioana Popovici, Jasper Bizindavyi, Gourab De, Dae Seon Kwon, Gouri Sankar Kar, Jan Van Houdt

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode.

Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements.

Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks.

Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, M. Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors.

Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar

Proceedings of the IEEE International Reliability Physics Symposium, 2022

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics.

Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, M. N. K. Alam, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2022

A comprehensive variability study of doped HfO2 FeFET for memory applications.

Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, G. Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2022

2021

Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications.

D. Saito, T. Kobayashi, Hiroki Koga, Nicolo Ronchi, Kaustuv Banerjee, Yusuke Shuto, Jun Okuno, Kenta Konishi, Luca Di Piazza, Arindam Mallik, Jan Van Houdt, Masanori Tsukamoto, K. Ohkuri, Taku Umebayashi, Takayuki Ezaki

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

Impact of mechanical strain on wakeup of HfO2 ferroelectric memory.

Anastasiia Kruv, Sean R. C. McMitchell, Sergiu Clima, Oguzhan O. Okudur, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability.

Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar

Proceedings of the IEEE International Memory Workshop, 2021

Understanding the memory window in 1T-FeFET memories: a depolarization field perspective.

K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2021

First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application.

K. Banerjee, L. Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, G. Van den Bosch, Jan Van Houdt

Proceedings of the IEEE International Memory Workshop, 2021

2020

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells.

Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications.

Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann

Proceedings of the 19th Non-Volatile Memory Technology Symposium, 2019

New Insights into the Imprint Effect in FE-HfO2 and its Recovery.

Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies.

Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Popovici, Guido Groeseneken, Jan Van Houdt

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

From planar to vertical capacitors: A step towards ferroelectric V-FeFET integration.

Karine Florent, Simone Lavizzari, Luca Di Piazza, Mihaela Popovici, Goedele Potoms, Tom Raymaekers, Guido Groeseneken, Jan Van Houdt

Proceedings of the 47th European Solid-State Device Research Conference, 2017

Doped GeSe materials for selector applications.

Naga Sruti Avasarala, Bogdan Govoreanu, Karl Opsomer, Wouter Devulder, Sergiu Clima, Christophe Detavernier, Marleen van der Veen, Jan Van Houdt, Marc Henys, Ludovic Goux, Gouri Sankar Kar

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2014

Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations.

Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang, Jan Van Houdt

Microelectron. Reliab., 2014

Assessment methodology of the lateral migration component in data retention of 3D SONOS memories.

Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt

Microelectron. Reliab., 2014

2012

Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories.

Pavel Poliakov, Pieter Blomme, Alessandro Vaglio Pret, Miguel Corbalan Miranda, Roel Gronheid, Diederik Verkest, Jan Van Houdt, Wim Dehaene

Microelectron. Reliab., 2012

2011

Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness.

Pavel Poliakov, Pieter Blomme, Miguel Corbalan, Jan Van Houdt, Wim Dehaene

Microelectron. Reliab., 2011

2007

Characterization of charge trapping in SiO₂/Al₂O₃ dielectric stacks by pulsed C-V technique.

Giuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt

Microelectron. Reliab., 2007

Distribution and generation of traps in SiO₂/Al₂O₃ gate stacks.

Isodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt

Microelectron. Reliab., 2007

2003

The HIMOS flash technology: the alternative solution for low-cost embedded memory.

Jan Van Houdt, Dirk Wellekens, Luc Haspeslagh

Proc. IEEE, 2003

2001

Simulation of 0.35 μm/0.25 μm CMOS Technology Doping Profiles.

M. Lorenzini, Luc Haspeslagh, Jan Van Houdt, Herman E. Maes

VLSI Design, 2001

A flash memory technology with quasi-virtual ground array for low-cost embedded applications.

Jorgo Tsouhlarakis, Guido Vanhorebeek, Geert Verhoeven, Jan De Blauwe, Shiho Kim, Dirk Wellekens, Paul Hendrickx, Luc Haspeslagh, Jan Van Houdt, Herman Maes

IEEE J. Solid State Circuits, 2001

1998

Novel level-identifying circuit for flash multilevel memories.

Donato Montanari, Jan Van Houdt, Guido Groeseneken, Herman E. Maes

IEEE J. Solid State Circuits, 1998