Arnaud Furnémont

According to our database1, Arnaud Furnémont authored at least 14 papers between 2017 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2023
Exploring Pareto-Optimal Hybrid Main Memory Configurations Using Different Emerging Memories.
IEEE Trans. Circuits Syst. I Regul. Pap., February, 2023

Design Technology co-optimization of 1D-1VCMA to improve read performance for SCM applications.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2023

2022

Design exploration of IGZO diode based VCMA array design for Storage Class Memory Applications.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021
Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2019
Manufacturable 300mm platform solution for Field-Free Switching SOT-MRAM.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019

New Memory Technology, Design and Architecture Co-Optimization to Enable Future System Needs.
Proceedings of the International Symposium on VLSI Design, Automation and Test, 2019

Impact of Mechanical Stress on the Electrical Performance of 3D NAND.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

A Comparative Analysis on the Impact of Bank Contention in STT-MRAM and SRAM Based LLCs.
Proceedings of the 37th IEEE International Conference on Computer Design, 2019

Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications.
Proceedings of the 56th Annual Design Automation Conference 2019, 2019

2018
SOT-MRAM 300mm integration for low power and ultrafast embedded memories.
CoRR, 2018

Main memory organization trade-offs with DRAM and STT-MRAM options based on gem5-NVMain simulation frameworks.
Proceedings of the 2018 Design, Automation & Test in Europe Conference & Exhibition, 2018

2017
A Smaller, Faster, and More Energy-Efficient Complementary STT-MRAM Cell Uses Three Transistors and a Ground Grid: More Is Actually Less.
IEEE Trans. Very Large Scale Integr. Syst., 2017

Cross-layer design and analysis of a low power, high density STT-MRAM for embedded systems.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2017


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