Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2019

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.

[BibT_eX]

[DOI]

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2018

Comphy - A compact-physics framework for unified modeling of BTI.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2018

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space.

[BibT_eX]

[DOI]

Jacopo Franco

Ben Kaczer

Erik Bury

Dimitri Linten

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Investigation of the endurance of FE-HfO2 devices by means of TDDB studies.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A multi-bit/cell PUF using analog breakdown positions in CMOS.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Self-heating-aware CMOS reliability characterization using degradation maps.

[BibT_eX]

[DOI]

Erik Bury

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations.

[BibT_eX]

[DOI]

Proceedings of the 48th European Solid-State Device Research Conference, 2018

A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS.

[BibT_eX]

[DOI]

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018

2016

Capturing True Workload Dependency of BTI-induced Degradation in CPU Components.

[BibT_eX]

[DOI]

Proceedings of the 26th edition on Great Lakes Symposium on VLSI, 2016

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

[BibT_eX]

[DOI]

Proceedings of the 46th European Solid-State Device Research Conference, 2016

Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization.

[BibT_eX]

[DOI]

Francesco Maria Puglisi

Proceedings of the 46th European Solid-State Device Research Conference, 2016

Analysis of NBTI effects on high frequency digital circuits.

[BibT_eX]

[DOI]

Proceedings of the 2016 Design, Automation & Test in Europe Conference & Exhibition, 2016

2015

Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes.

[BibT_eX]

[DOI]

Sharifah Wan Muhamad Hatta

Microprocess. Microsystems, 2015

Characterization and modeling of reliability issues in nanoscale devices.

[BibT_eX]

[DOI]

Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015

Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Origins and implications of increased channel hot carrier variability in nFinFETs.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

ESD characterization of planar InGaAs devices.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

On the volatility of oxide defects: Activation, deactivation, and transformation.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Reliability Physics Symposium, 2015

Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology.

[BibT_eX]

[DOI]

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations.

[BibT_eX]

[DOI]

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

Off-state stress degradation mechanism on advanced p-MOSFETs.

[BibT_eX]

[DOI]

Proceedings of the 2015 International Conference on IC Design & Technology, 2015

The defect-centric perspective of device and circuit reliability - From individual defects to circuits.

[BibT_eX]

[DOI]

Proceedings of the 45th European Solid State Device Research Conference, 2015

Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow.

[BibT_eX]

[DOI]

Annelies Vanderheyden

Proceedings of the 45th European Solid State Device Research Conference, 2015

Experimental evidences and simulations of trap generation along a percolation path.

[BibT_eX]

[DOI]

Proceedings of the 45th European Solid State Device Research Conference, 2015

Characterization and simulation methodology for time-dependent variability in advanced technologies.

[BibT_eX]

[DOI]

Proceedings of the 2015 IEEE Custom Integrated Circuits Conference, 2015

2014

Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits.

[BibT_eX]

[DOI]

Vinicius V. A. Camargo

IEEE Trans. Very Large Scale Integr. Syst., 2014

Energy distribution of positive charges in high-k dielectric.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2014

Circuit simulation of workload-dependent RTN and BTI based on trap kinetics.

[BibT_eX]

[DOI]

Vinicius V. A. Camargo

Ben Kaczer

Tibor Grasser

Gilson I. Wirth

Microelectron. Reliab., 2014

On reliability enhancement using adaptive core voltage scaling and variations on nanoscale FPGAs.

[BibT_eX]

[DOI]

Proceedings of the 15th Latin American Test Workshop, 2014

Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology.

[BibT_eX]

[DOI]

Proceedings of the Fifteenth International Symposium on Quality Electronic Design, 2014

Characterization and modeling of charge trapping: From single defects to devices.

[BibT_eX]

[DOI]

Proceedings of the 2014 IEEE International Conference on IC Design & Technology, 2014

Impact of Off State Stress on advanced high-K metal gate NMOSFETs.

[BibT_eX]

[DOI]

Proceedings of the 44th European Solid State Device Research Conference, 2014

NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes.

[BibT_eX]

[DOI]

Proceedings of the 17th Euromicro Conference on Digital System Design, 2014

Bias Temperature Instability analysis of FinFET based SRAM cells.

[BibT_eX]

[DOI]

Proceedings of the Design, Automation & Test in Europe Conference & Exhibition, 2014

2013

Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model.

[BibT_eX]

[DOI]

Microprocess. Microsystems, 2013

2012

Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling.

[BibT_eX]

[DOI]

IEEE Trans. Very Large Scale Integr. Syst., 2012

Defect-centric perspective of time-dependent BTI variability.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic.

[BibT_eX]

[DOI]

Microelectron. Reliab., 2012

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model.

[BibT_eX]

[DOI]

Proceedings of the 15th Euromicro Conference on Digital System Design, 2012

2011

Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements.

[BibT_eX]

[DOI]

IEEE Trans. Very Large Scale Integr. Syst., 2011

Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling.

[BibT_eX]

[DOI]

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2011), 2011

2010

Experimental study of leakage-delay trade-off in Germanium pMOSFETs for logic circuits.

[BibT_eX]

[DOI]

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010

2009

A CMOS circuit for evaluating the NBTI over a wide frequency range.

[BibT_eX]

[DOI]

R. Fernández-García

Ben Kaczer