Gaobo Xu

According to our database, Gaobo Xu authored at least 9 papers between 2017 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

An AND-type 1T-FeFET array with robust write and read operations.

Jiacheng Xu, Jiayi Zhao, Hongrui Zhang, Haoji Qian, Jiani Gu, Bowen Chen, Gaobo Lin, Rongzong Shen, Xinda Song, Huan Liu, Yian Ding, Minglei Ma, Miaomiao Zhang, Xiao Yu, Bing Chen, Ran Cheng, Gaobo Xu, Huaxiang Yin, Yan Liu, Jiajia Chen, Chengji Jin, Genquan Han

Sci. China Inf. Sci., 2025

Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors.

Liang Xiang, Gangping Yan, Yunfei Shi, Hong Yang, Shangbo Yang, Gaobo Xu, Xiaolei Wang, Guilei Wang, Huaxiang Yin, Chao Zhao, Jun Luo, Wenwu Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs.

Fan Zhang, Zhaohao Zhang, Jiaxin Yao, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Huan Liu, Genquan Han, Yan Liu, Huaxiang Yin

Sci. China Inf. Sci., 2024

2023

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.

Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang

Adv. Intell. Syst., November, 2023

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.

Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin

Sci. China Inf. Sci., October, 2023

2022

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions.

Xueqin Yang, Yannan Xu, Jinshun Bi, Kai Xi, Linjie Fan, Lanlong Ji, Gaobo Xu

Sci. China Inf. Sci., 2022

2020

Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.

Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang

Sci. China Inf. Sci., 2020

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin

IEEE Access, 2020

2017

Total ionizing dose effects and annealing behaviors of HfO₂-based MOS capacitor.

Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu

Sci. China Inf. Sci., 2017