Zhaohao Zhang

According to our database, Zhaohao Zhang authored at least 6 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors.

Peng Zhao, Lei Cao, Fan Zhang, Haoqing Xu, Weizhuo Gan, Qingzhu Zhang, Zhaohao Zhang, Jiaxin Yao, Guoliang Tian, Kun Luo, Zhenhua Wu, Huaxiang Yin

Microelectron. J., November, 2023

Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.

Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang

Adv. Intell. Syst., November, 2023

Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.

Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin

Sci. China Inf. Sci., October, 2023

2021

Three-dimensional Graphene FETs for pH Detection.

Tao Deng, Zhaohao Zhang, Yang Zhang, Yuning Li, Zewen Liu

Proceedings of the 16th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2021

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.

Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.

Longda Zhou, Qingzhu Zhang, Hong Yang, Zhigang Ji, Zhaohao Zhang, Renren Xu, Huaxiang Yin, Wenwu Wang

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020