Qi Liu
Orcid: 0000-0001-7062-831XAffiliations:
- Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China
- Anhui University, College of Electronics and Technology, China (PhD 2010)
According to our database1,
Qi Liu
authored at least 23 papers
between 2010 and 2024.
Collaborative distances:
Collaborative distances:
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Bibliography
2024
HARDSEA: Hybrid Analog-ReRAM Clustering and Digital-SRAM In-Memory Computing Accelerator for Dynamic Sparse Self-Attention in Transformer.
IEEE Trans. Very Large Scale Integr. Syst., February, 2024
Write-Verify-Free MLC RRAM Using Nonbinary Encoding for AI Weight Storage at the Edge.
IEEE Trans. Very Large Scale Integr. Syst., February, 2024
A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.
IEEE J. Solid State Circuits, January, 2024
2023
Multicore Spiking Neuromorphic Chip in 180-nm With ReRAM Synapses and Digital Neurons.
IEEE J. Emerg. Sel. Topics Circuits Syst., December, 2023
A 28-nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference.
IEEE J. Solid State Circuits, October, 2023
A 14b 500 MS/s Single-Channel Pipelined-SAR ADC With Reference Ripple Mitigation Techniques and Adaptively Biased Floating Inverter Amplifier.
IEEE J. Solid State Circuits, October, 2023
An Emerging NVM CIM Accelerator With Shared-Path Transpose Read and Bit-Interleaving Weight Storage for Efficient On-Chip Training in Edge Devices.
IEEE Trans. Circuits Syst. II Express Briefs, July, 2023
A 9Mb HZO-Based Embedded FeRAM with 10<sup>12</sup>-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
Bit-Offsetter: A Bit-serial DNN Accelerator with Weight-offset MAC for Bit-wise Sparsity Exploitation.
Proceedings of the 5th IEEE International Conference on Artificial Intelligence Circuits and Systems, 2023
2022
Adv. Intell. Syst., December, 2022
High-Speed and Time-Interleaved ADCs Using Additive-Neural-Network-Based Calibration for Nonlinear Amplitude and Phase Distortion.
IEEE Trans. Circuits Syst. I Regul. Pap., 2022
A 28 nm 81 Kb 59-95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output.
IEEE J. Emerg. Sel. Topics Circuits Syst., 2022
A neuromorphic core based on threshold switching memristor with asynchronous address event representation circuits.
Sci. China Inf. Sci., 2022
2021
An Energy Efficient Computing-in-Memory Accelerator With 1T2R Cell and Fully Analog Processing for Edge AI Applications.
IEEE Trans. Circuits Syst. II Express Briefs, 2021
Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM With Input-Dependent Sensing Control.
IEEE Trans. Circuits Syst. II Express Briefs, 2021
Sparsity-Aware Clamping Readout Scheme for High Parallelism and Low Power Nonvolatile Computing-in-Memory Based on Resistive Memory.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2021
2020
33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A Few-Step and Low-Cost Memristor Logic Based on MIG Logic for Frequent-Off Instant-On Circuits in IoT Applications.
IEEE Trans. Circuits Syst. II Express Briefs, 2019
A Reconfigurable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source With <6×10<sup>-6</sup> Native Bit Error Rate.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
An Asynchronous AER Circuits with Rotation Priority Tree Arbiter for Neuromorphic Hardware with Analog Neuron.
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2018
Sci. China Inf. Sci., 2018
2017
A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.
Proceedings of the 2017 IEEE Custom Integrated Circuits Conference, 2017
2010
Formation and annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2: Cu/Pt ReRAM.
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010