Garam Choi

According to our database, Garam Choi authored at least 3 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

QLC Programmable 3D Ferroelectric NAND Flash Memory by Memory Window Expansion using Cell Stack Engineering.

Sunghyun Yoon, Sung-In Hong, Daehyun Kim, Garam Choi, Young Mo Kim, Kyunghoon Min, Seiyon Kim, Myung-Hee Na, Seonyong Cha

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

A 1.01V 8.5Gb/s/pin 16Gb LPDDR5x SDRAM with Self-Pre-Emphasized Stacked-Tx, Supply Voltage Insensitive Rx, and Optimized Clock Using 4th-Generation 10nm DRAM Process for High-Speed and Low-Power Applications.

Hyun-A. Ahn, Yoo-Chang Sung, Yong-Hun Kim, Janghoo Kim, Kihan Kim, Donghun Lee, Young-Gil Go, Jae-Woo Lee, Jae-Woo Jung, Yong-Hyun Kim, Garam Choi, Jun-Seo Park, Bo-Hyeon Lee, Jin-Hyeok Baek, Daesik Moon, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Changsik Yoo, Tae-Young Oh

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023

2022

Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory.

Sunghyun Yoon, Sung-In Hong, Garam Choi, Daehyun Kim, Ildo Kim, Seok Min Jeon, Changhan Kim, Kyunghoon Min

Proceedings of the IEEE International Memory Workshop, 2022