Daesik Moon
According to our database1,
Daesik Moon
authored at least 10 papers
between 2014 and 2023.
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Bibliography
2023
A 1.01V 8.5Gb/s/pin 16Gb LPDDR5x SDRAM with Self-Pre-Emphasized Stacked-Tx, Supply Voltage Insensitive Rx, and Optimized Clock Using 4th-Generation 10nm DRAM Process for High-Speed and Low-Power Applications.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023
2020
IEEE J. Solid State Circuits, 2020
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2018
Dual-Loop Two-Step ZQ Calibration for Dynamic Voltage-Frequency Scaling in LPDDR4 SDRAM.
IEEE J. Solid State Circuits, 2018
A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018
2017
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017
2015
A 6.4Gb/s/pin at sub-1V supply voltage TX-interleaving technique for mobile DRAM interface.
Proceedings of the Symposium on VLSI Circuits, 2015
2014
25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014