Tae-Young Oh
According to our database1,
Tae-Young Oh
authored at least 17 papers
between 2006 and 2024.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2024
13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5<sup>th</sup>-Generation 10nm DRAM Process.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
13.6 A 16Gb 37Gb/s GDDR7 DRAM with PAM3-Optimized TRX Equalization and ZQ Calibration.
Proceedings of the IEEE International Solid-State Circuits Conference, 2024
2023
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ.
IEEE J. Solid State Circuits, 2023
A 1.01V 8.5Gb/s/pin 16Gb LPDDR5x SDRAM with Self-Pre-Emphasized Stacked-Tx, Supply Voltage Insensitive Rx, and Optimized Clock Using 4th-Generation 10nm DRAM Process for High-Speed and Low-Power Applications.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2023
2022
A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
Proceedings of the IEEE Hot Chips 33 Symposium, 2021
2020
IEEE J. Solid State Circuits, 2020
2019
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2017
23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017
2015
A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation.
IEEE J. Solid State Circuits, 2015
2014
IEEE Trans. Circuits Syst. I Regul. Pap., 2014
25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2011
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction.
IEEE J. Solid State Circuits, 2011
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011
2010
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010
2006
Proceedings of the IEEE 2006 Custom Integrated Circuits Conference, 2006