Gérard Sarrabayrouse

According to our database, Gérard Sarrabayrouse authored at least 7 papers between 2001 and 2008.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2008

Advanced Low-Noise X-Ray Readout ASIC for Radiation Sensor Interfaces.

Thomas Noulis, Stylianos Siskos, Gérard Sarrabayrouse, Laurent Bary

IEEE Trans. Circuits Syst. I Regul. Pap., 2008

Analysis and selection criteria of BSIM4 flicker noise simulation models.

Thomas Noulis, Stilianos Siskos, Gérard Sarrabayrouse

Int. J. Circuit Theory Appl., 2008

Noise optimised charge-sensitive CMOS amplifier for capacitive radiation detectors.

Thomas Noulis, Stylianos Siskos, Gérard Sarrabayrouse

IET Circuits Devices Syst., 2008

2007

Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions.

Thomas Noulis, Stylianos Siskos, Gérard Sarrabayrouse

Microelectron. Reliab., 2007

Characterisation of P floating islands for 150-200 V FLYMOSFETs.

Yann Weber, Jaume Roig, Jean-Michel Reynes, Frederic Morancho, Evgueniy N. Stefanov, Monique Dilhan, Gérard Sarrabayrouse

IET Circuits Devices Syst., 2007

2004

Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications.

Nicolas Guitard, David Trémouilles, Marise Bafleur, Laurent Escotte, Laurent Bary, Philippe Perdu, Gérard Sarrabayrouse, Nicolas Nolhier, Roberto Reyna-Rojas

Microelectron. Reliab., 2004

2001

Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer.

Laurent Jalabert, Pierre Temple-Boyer, Gérard Sarrabayrouse, F. Cristiano, B. Colombeau, F. Voillot, C. Armand

Microelectron. Reliab., 2001