H. Puliyalil

According to our database, H. Puliyalil authored at least 3 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Lowest IOFF < 3×10^-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.

Attilio Belmonte, S. Kundu, S. Subhechha, Adrian Vaisman Chasin, Nouredine Rassoul, Harold Dekkers, H. Puliyalil, F. Seidel, P. Carolan, Romain Delhougne, Gouri Sankar Kar

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.

S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, S. Sutar, L. Magnarin, Umberto Celano, H. Puliyalil, S. Kundu, M. Pak, Lieve Teugels, D. Tsvetanova, Nina Bazzazian, Kevin Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.

S. Subhechha, Nouredine Rassoul, Attilio Belmonte, Hubert Hody, Harold Dekkers, Michiel J. van Setten, Adrian Vaisman Chasin, Shamin H. Sharifi, K. Banerjee, H. Puliyalil, S. Kundu, M. Pak, D. Tsvetanova, Nina Bazzazian, Kevin Vandersmissen, D. Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar

Proceedings of the International Conference on IC Design and Technology, 2022