Nouredine Rassoul

Orcid: 0000-0001-9489-3396

According to our database1, Nouredine Rassoul authored at least 7 papers between 2018 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

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Bibliography

2023
Lowest IOFF < 3×10<sup>-21</sup> A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays.
Proceedings of the IEEE International Memory Workshop, 2023

2022
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control.
Proceedings of the International Conference on IC Design and Technology, 2022

2021
Process-induced charging damage in IGZO nTFTs.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2018
Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling.
Proceedings of the 2018 International Conference on IC Design & Technology, 2018


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