Hyuntaek Jung

According to our database, Hyuntaek Jung authored at least 7 papers between 2017 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2023

A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V.

Gyuseong Kang, Hyunjin Shin, Hyuntaek Jung, Sunkyu Lee, Jaeseung Choi, Sangyeop Baek, Hyunsung Jung, Daeshik Kim, Sohee Hwang, Shinhee Han, Yongsung Ji, Sei Seung Yoon

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

CONSEN: Complementary and Simultaneous Ensemble for Alzheimer's Disease Detection and MMSE Score Prediction.

Longbin Jin, Yealim Oh, Hyunseo Kim, Hyuntaek Jung, Hyo Jin Jon, Jung Eun Shin, Eun Yi Kim

Proceedings of the IEEE International Conference on Acoustics, 2023

2018

A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications.

Taejoong Song, Jonghoon Jung, Woojin Rim, Hoonki Kim, Yongho Kim, Changnam Park, Jeongho Do, Sunghyun Park, Sungwee Cho, Hyuntaek Jung, Bongjae Kwon, Hyun-Su Choi, Jaeseung Choi, Jong Shik Yoon

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

Embedded MRAM Macro for eFlash Replacement.

Artur Antonyan, Suk-Soo Pyo, Hyuntaek Jung, Taejoong Song

Proceedings of the IEEE International Symposium on Circuits and Systems, 2018

2017

A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization.

Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Giyong Yang, Hoonki Kim, Sanghoon Baek, Jonghoon Jung, Bongjae Kwon, Sungwee Cho, Hyuntaek Jung, Yongjae Choo, Jaeseung Choi

IEEE J. Solid State Circuits, 2017

12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis.

Taejoong Song, Hoonki Kim, Woojin Rim, Yongho Kim, Sunghyun Park, Changnam Park, Minsun Hong, Giyong Yang, Jeongho Do, Jinyoung Lim, Seungyoung Lee, Ingyum Kim, Sanghoon Baek, Jonghoon Jung, Daewon Ha, Hyungsoon Jang, Taejung Lee, Chul-Hong Park, Bongjae Kwon, Hyuntaek Jung, Sungwee Cho, Yongjae Choo, Jaeseung Choi

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

28-nm 1T-1MTJ 8Mb 64 I/O STT-MRAM with symmetric 3-section reference structure and cross-coupled sensing amplifier.

Artur Antonyan, Suk-Soo Pyo, Hyuntaek Jung, Gwanhyeob Koh, Taejoong Song

Proceedings of the IEEE International Symposium on Circuits and Systems, 2017