Gwanhyeob Koh

According to our database1, Gwanhyeob Koh authored at least 6 papers between 2002 and 2020.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of five.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2020
A 14.7Mb/mm<sup>2</sup> 28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020

2019
Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2017
28-nm 1T-1MTJ 8Mb 64 I/O STT-MRAM with symmetric 3-section reference structure and cross-coupled sensing amplifier.
Proceedings of the IEEE International Symposium on Circuits and Systems, 2017

2005
A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM).
IEEE J. Solid State Circuits, 2005

2003
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme.
IEEE J. Solid State Circuits, 2003

2002
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon.
Microelectron. Reliab., 2002


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