Sunghyun Park

Affiliations:
  • Samsung Electronics Co., Ltd., South Korea


According to our database1, Sunghyun Park authored at least 6 papers between 2014 and 2018.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2018
A 7nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017
A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization.
IEEE J. Solid State Circuits, 2017

12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2016
17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2015
A 14 nm FinFET 128 Mb SRAM With V<sub>MIN</sub> Enhancement Techniques for Low-Power Applications.
IEEE J. Solid State Circuits, 2015

2014
13.2 A 14nm FinFET 128Mb 6T SRAM with VMIN-enhancement techniques for low-power applications.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014


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