Rainer Minixhofer

According to our database, Rainer Minixhofer authored at least 9 papers between 2004 and 2015.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2015

Towards probabilistic analog behavioral modeling.

André Lange, Ihor Harasymiv, Oliver Eisenberger, Frederic Roger, Joachim Haase, Rainer Minixhofer

Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015

Building interchangeable black-box models of integrated circuits for EMC simulations.

Marko Magerl, Christian Stockreiter, Oliver Eisenberger, Rainer Minixhofer, Adrijan Baric

Proceedings of the 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, 2015

2010

Interface traps density-of-states as a vital component for hot-carrier degradation modeling.

Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser

Microelectron. Reliab., 2010

2008

Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors.

Verena Vescoli, Jong Mun Park, Hubert Enichlmair, Martin Knaipp, Georg Röhrer, Rainer Minixhofer, Martin Schrems

IET Circuits Devices Syst., 2008

Scalable High Voltage CMOS technology for Smart Power and sensor applications.

Martin Schrems, Martin Knaipp, Hubert Enichlmair, Verena Vescoli, Rainer Minixhofer, Ehrenfried Seebacher, Friedrich Peter Leisenberger, Ewald Wachmann, Gregor Schatzberger, Heimo Gensinger

Elektrotech. Informationstechnik, 2008

2007

Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures.

Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer

Microelectron. Reliab., 2007

Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor.

Hubert Enichlmair, Sara Carniello, Jong Mun Park, Rainer Minixhofer

Microelectron. Reliab., 2007

2006

FlexRay transceiver in a 0.35 µm CMOS high-voltage technology.

Federico Baronti, Paolo D'Abramo, Martin Knaipp, Rainer Minixhofer, Roberto Roncella, Roberto Saletti, Martin Schrems, Riccardo Serventi, Verena Vescoli

Proceedings of the Conference on Design, Automation and Test in Europe: Designers' Forum, 2006

2004

Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures.

Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr

Microelectron. J., 2004