J. B. Johnson

According to our database, J. B. Johnson authored at least 4 papers between 2015 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2022

Optimized LDMOS Offering for Power Management and RF Applications.

Salvatore Cimino, J. Singh, J. B. Johnson, W. Zheng, Y. Chen, W. Liu, P. Srinivasan, O. Gonzales, M. Hauser, Matthew Koskinen, K. Nagahiro, Y. Liu, B. Min, Tanya Nigam, N. Squib

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2019

High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs.

U. Rana, D. P. Brunco, S. Raman, Dina H. Triyoso, M. W. Stoker, J. B. Johnson, Luigi Pantisano, K. D. Seo, M. Zhao, A. Reznicek, R. Krishnan, B. Moser, J. Freeman, L. Jang, Evgeny Kaganer

Proceedings of the Device Research Conference, 2019

2018

Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies.

D. Singh, Oscar D. Restrepo, P. P. Manik, N. Rao Mavilla, H. Zhang, Peter C. Paliwoda, S. Pinkett, Y. Deng, Eduardo Cruz Silva, J. B. Johnson, M. Bajaj, S. Furkay, Z. Chbili, A. Kerber, C. Christiansen, S. Narasimha, E. Maciejewski, S. Samavedam, C.-H. Lin

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2015

Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications.

Chandrasekharan Kothandaraman, X. Chen, Dan Moy, D. Lea, Sami Rosenblatt, Faraz Khan, Derek Leu, Toshiaki Kirihata, D. Ioannou, Giuseppe La Rosa, J. B. Johnson, Norman Robson, Subramanian S. Iyer

Proceedings of the IEEE International Reliability Physics Symposium, 2015