Justin Sandford

According to our database, Justin Sandford authored at least 2 papers between 2021 and 2022.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2022

Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing.

Bernhard Sell, S. An, J. Armstrong, D. Bahr, B. Bains, R. Bambery, K. Bang, D. Basu, S. Bendapudi, D. Bergstrom, R. Bhandavat, S. Bhowmick, M. Buehler, D. Caselli, S. Cekli, Vrsk. Chaganti, Y. J. Chang, K. Chikkadi, T. Chu, T. Crimmins, G. Darby, C. Ege, P. Elfick, Tyler Elko-Hansen, S. Fang, C. Gaddam, M. Ghoneim, H. Gomez, S. Govindaraju, Z. Guo, Walid M. Hafez, M. Haran, M. Hattendorf, S. Hu, A. Jain, S. Jaloviar, M. Jang, J. Kameswaran, V. Kapinus, A. Kennedy, S. Klopcic, D. Krishnan, J. Leib, Y.-T. Lin, N. Lindert, G. Liu, O. Loh, Y. Luo, S. Mani, M. Mleczko, S. Mocherla, P. Packan, M. Paik, A. Paliwal, R. Pandey, K. Patankar, L. Pipes, P. Plekhanov, Chetan Prasad, M. Prince, G. Ramalingam, R. Ramaswamy, J. Riley, J. R. Sanchez Perez, Justin Sandford, A. Sathe, F. Shah, H. Shim, S. Subramanian, S. Tandon, M. Tanniru, D. Thakurta, T. Troeger, X. Wang, C. Ward, A. Welsh, S. Wickramaratne, J. Wnuk, S. Q. Xu, P. Yashar, J. Yaung, K. Yoon, N. Young

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors.

Nachiket V. Desai, Harish K. Krishnamurthy, William J. Lambert, Jingshu Yu, Han Wui Then, Nicolas Butzen, Sheldon Weng, Christopher Schaef, N. Nidhi, Marko Radosavljevic, Johann Rode, Justin Sandford, Kaladhar Radhakrishnan, Krishnan Ravichandran, Bernhard Sell, James W. Tschanz, Vivek De

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021