M. Ghoneim

According to our database, M. Ghoneim authored at least 3 papers between 2022 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologies.

K. Joshi, D. Nminibapiel, M. Ghoneim, D. Ali, R. Ramamurthy, L. Pantisano, Inanc Meric, Stephen Ramey

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology.

M. Jamil, S. Mukhopadhay, M. Ghoneim, A. Shailos, Chetan Prasad, Inanc Meric, Stephen Ramey

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing.

Bernhard Sell, S. An, J. Armstrong, D. Bahr, B. Bains, R. Bambery, K. Bang, D. Basu, S. Bendapudi, D. Bergstrom, R. Bhandavat, S. Bhowmick, M. Buehler, D. Caselli, S. Cekli, Vrsk. Chaganti, Y. J. Chang, K. Chikkadi, T. Chu, T. Crimmins, G. Darby, C. Ege, P. Elfick, Tyler Elko-Hansen, S. Fang, C. Gaddam, M. Ghoneim, H. Gomez, S. Govindaraju, Z. Guo, Walid M. Hafez, M. Haran, M. Hattendorf, S. Hu, A. Jain, S. Jaloviar, M. Jang, J. Kameswaran, V. Kapinus, A. Kennedy, S. Klopcic, D. Krishnan, J. Leib, Y.-T. Lin, N. Lindert, G. Liu, O. Loh, Y. Luo, S. Mani, M. Mleczko, S. Mocherla, P. Packan, M. Paik, A. Paliwal, R. Pandey, K. Patankar, L. Pipes, P. Plekhanov, Chetan Prasad, M. Prince, G. Ramalingam, R. Ramaswamy, J. Riley, J. R. Sanchez Perez, Justin Sandford, A. Sathe, F. Shah, H. Shim, S. Subramanian, S. Tandon, M. Tanniru, D. Thakurta, T. Troeger, X. Wang, C. Ward, A. Welsh, S. Wickramaratne, J. Wnuk, S. Q. Xu, P. Yashar, J. Yaung, K. Yoon, N. Young

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022