Bernhard Sell

According to our database, Bernhard Sell authored at least 5 papers between 2018 and 2023.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2023

E-Core Implementation in Intel 4 with PowerVia (Backside Power) Technology.

M. Shamanna, E. Abuayob, G. Aenuganti, C. Alvares, J. Antony, A. Bahudhanam, A. Chandran, P. Chew, A. Chatterjee, B. Chauhan, N. Dandeti, J. Desai, M. Doyle, T. Dmukauskas, P. Farache, E. Fetzer, K. Fischer, P. Hack, Y. Greenzweig, J. Giacobbe, Walid M. Hafez, E. Haralson, A. Hegde, A. Illa, M. Islam, S. Jain, M. Jang, J. Nguyen, T. Tong, L. Jiang, Eric Karl, P. Kalangi, G. Khoo, A. Krishnamoorthy, B. Kuns, W. Li, R. Livengood, T. Malik, R. Priyanka, H. Faraby, Y. Maymon, K. Mistry, K. Morgan, S. Natarajan, O. Nevo, M. Oh, P. Pardy, J. Park, P. Penmatsa, B. Phelps, C. Peterson, S. Rajappa, A. Raveh, A Rezaie, T. Ravishankar, R. Ramaswamy, S. Reddy, R. Saha, S. Sen, R. Sanchez, R. Sanaga, B. Simkhovich, Bernhard Sell, M. Senger, B. Schnarch, M. Seshadri, O. Sidorov, S. Subramanian, K. Subramanian, B. Truong, S. Bangalore, Jeffery Hicks, S. Venkatesh, D. Christensen, K. Bhargav, M. Von Haartman, P. Joshi, S. Zickel, C.-H. Lin, J. Huening, T.-H. Wu, N. Bakken, A. Afzal, A. Raman, Sj. Rao, V. Kawar, J. Neirynck, D. Bradley, M. Duwe, S. Wu, V. Patil, M. Bayoumy

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Intel PowerVia Technology: Backside Power Delivery for High Density and High-Performance Computing.

Walid M. Hafez, P. Agnihotri, M. Asoro, M. Aykol, B. Bains, R. Bambery, M. Bapna, A. Barik, A. Chatterjee, P. C. Chiu, T. Chu, C. Firby, K. Fischer, M. Fradkin, Hannes Greve, A. Gupta, E. Haralson, M. Haran, Jeffery Hicks, A. Illa, M. Jang, S. Klopcic, M. Kobrinsky, B. Kuns, H.-h. Lai, G. Lanni, S.-H. Lee, N. Lindert, C.-l. Lo, Y. Luo, G. Malyavanatham, B. Marinkovic, Y. Maymon, M. Nabors, J. Neirynck, P. Packan, A. Paliwal, L. Pantisano, Leif Paulson, Padma Penmatsa, Chetan Prasad, Conor Puls, T. Rahman, R. Ramaswamy, S. Samant, Bernhard Sell, K. Sethi, F. Shah, M. Shamanna, K. Shang, Q. Li, M. Sibakoti, J. Stoeger, N. Strutt, R. Thirugnanasambandam, C. Tsai, X. Wang, A. Wang, S.-j. Wu, Q. Xu, X.-h. Zhong, S. Natarajan

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

2022

Intel 4 CMOS Technology Featuring Advanced FinFET Transistors optimized for High Density and High-Performance Computing.

Bernhard Sell, S. An, J. Armstrong, D. Bahr, B. Bains, R. Bambery, K. Bang, D. Basu, S. Bendapudi, D. Bergstrom, R. Bhandavat, S. Bhowmick, M. Buehler, D. Caselli, S. Cekli, Vrsk. Chaganti, Y. J. Chang, K. Chikkadi, T. Chu, T. Crimmins, G. Darby, C. Ege, P. Elfick, Tyler Elko-Hansen, S. Fang, C. Gaddam, M. Ghoneim, H. Gomez, S. Govindaraju, Z. Guo, Walid M. Hafez, M. Haran, M. Hattendorf, S. Hu, A. Jain, S. Jaloviar, M. Jang, J. Kameswaran, V. Kapinus, A. Kennedy, S. Klopcic, D. Krishnan, J. Leib, Y.-T. Lin, N. Lindert, G. Liu, O. Loh, Y. Luo, S. Mani, M. Mleczko, S. Mocherla, P. Packan, M. Paik, A. Paliwal, R. Pandey, K. Patankar, L. Pipes, P. Plekhanov, Chetan Prasad, M. Prince, G. Ramalingam, R. Ramaswamy, J. Riley, J. R. Sanchez Perez, Justin Sandford, A. Sathe, F. Shah, H. Shim, S. Subramanian, S. Tandon, M. Tanniru, D. Thakurta, T. Troeger, X. Wang, C. Ward, A. Welsh, S. Wickramaratne, J. Wnuk, S. Q. Xu, P. Yashar, J. Yaung, K. Yoon, N. Young

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors.

Nachiket V. Desai, Harish K. Krishnamurthy, William J. Lambert, Jingshu Yu, Han Wui Then, Nicolas Butzen, Sheldon Weng, Christopher Schaef, N. Nidhi, Marko Radosavljevic, Johann Rode, Justin Sandford, Kaladhar Radhakrishnan, Krishnan Ravichandran, Bernhard Sell, James W. Tschanz, Vivek De

Proceedings of the 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021, 2021

2018

Transistor reliability characterization and modeling of the 22FFL FinFET technology.

Chen-Yi Su, M. Armstrong, Lei Jiang, S. A. Kumar, C. D. Landon, S. Liu, Inanc Meric, K. W. Park, Leif Paulson, K. Phoa, Bernhard Sell, Jihan Standfest, Ketul B. Sutaria, J. Wan, D. Young, Stephen Ramey

Proceedings of the IEEE International Reliability Physics Symposium, 2018