Inanc Meric

According to our database, Inanc Meric authored at least 12 papers between 2008 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Novel Cell Architectures with Back-side Transistor Contacts for Scaling and Performance.

Mauro J. Kobrinsky, J. D. Silva, E. Mannebach, S. Mills, M. Abd El Qader, O. Adebayo, N. Arkali Radhakrishna, M. Beasley, J. Chawla, S. Chugh, A. Dasgupta, U. Desai, E. De Re, G. Dewey, T. Edwards, C. Engel, V. Gudmundsson, Jeffery Hicks, B. Krist, R. Mehandru, Inanc Meric, Patrick Morrow, D. Nandi, P. Patel, R. Ramamurthy, D. Samanta, L. Shoer, A. St Amour, L. H. Tan, Sukru Yemenicioglu, X. Wang, T. Ghani

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

A Unified Aging Model Framework Capturing Device to Circuit Degradation for Advance Technology Nodes.

S. Mukhopadhyay, C. Chen, M. Jamil, Jihan Standfest, Inanc Meric, Balkaran Gill, Stephen Ramey

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Localized thermal effects in Gate-all-around devices.

Colin Landon, Lei Jiang, Daniel Pantuso, Inanc Meric, Kam Komeyli, Jeffrey Hicks, Daniel Schroeder

Proceedings of the IEEE International Reliability Physics Symposium, 2023

A detailed comparison of various off-state breakdown methodologies for scaled Tri-gate technologies.

K. Joshi, D. Nminibapiel, M. Ghoneim, D. Ali, R. Ramamurthy, L. Pantisano, Inanc Meric, Stephen Ramey

Proceedings of the IEEE International Reliability Physics Symposium, 2023

Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology.

M. Jamil, S. Mukhopadhay, M. Ghoneim, A. Shailos, Chetan Prasad, Inanc Meric, Stephen Ramey

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

Method to evaluate off-state breakdown in scaled Tri-gate technologies.

D. Nminibapiel, K. Joshi, R. Ramamurthy, L. Pantisano, Inanc Meric, Stephen Ramey

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Machine Learning On Transistor Aging Data: Test Time Reduction and Modeling for Novel Devices.

Neel Chatterjee, John Ortega, Inanc Meric, Peng Xiao, Ilan Tsameret

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Novel Re-configurable Circuits For Aging Characterization: Connecting Devices to Circuits.

Ketul B. Sutaria, Jihan Standfest, Inanc Meric, Amirhossein H. Davoody, Swaroop Kumar Namalapuri, Trinadh Mutyala, Supriya P., Balkaran Gill, Stephen Ramey, Jeffery Hicks

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Modeling Framework for Transistor Aging Playback in Advanced Technology Nodes.

Inanc Meric, Stephen Ramey, Steven R. Novak, S. Gupta, S. P. Mudanai, Jeffrey Hicks

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Transistor reliability characterization and modeling of the 22FFL FinFET technology.

Chen-Yi Su, M. Armstrong, Lei Jiang, S. A. Kumar, C. D. Landon, S. Liu, Inanc Meric, K. W. Park, Leif Paulson, K. Phoa, Bernhard Sell, Jihan Standfest, Ketul B. Sutaria, J. Wan, D. Young, Stephen Ramey

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2013

Graphene Field-Effect Transistors Based on Boron-Nitride Dielectrics.

Inanc Meric, Cory R. Dean, Nicholas Petrone, Lei Wang, James C. Hone, Philip Kim, Kenneth L. Shepard

Proc. IEEE, 2013

2008

Characterization and modeling of graphene field-effect devices.

Kenneth L. Shepard, Inanc Meric, Philip Kim

Proceedings of the 2008 International Conference on Computer-Aided Design, 2008