Denis Marcon

According to our database, Denis Marcon authored at least 10 papers between 2011 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.

Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2016

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.

Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni

Microelectron. Reliab., 2016

2015

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs.

Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni

Microelectron. Reliab., 2015

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.

Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress.

Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere

Microelectron. Reliab., 2014

Breakdown investigation in GaN-based MIS-HEMT devices.

Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors.

Paul Marko, Matteo Meneghini, Sergey Bychikhin, Denis Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany

Microelectron. Reliab., 2012

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop.

Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels, Stefaan Decoutere

Microelectron. Reliab., 2012

High temperature behaviour of GaN-on-Si high power MISHEMT devices.

Dirk Wellekens, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu, Denis Marcon, Puneet Srivastava, Marleen Van Hove, Stefaan Decoutere

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2011

GaN-based HEMTs tested under high temperature storage test.

Denis Marcon, Xuanwu Kang, John Viaene, Marleen Van Hove, Puneet Srivastava, Stefaan Decoutere, Robert Mertens, Gustaaf Borghs

Microelectron. Reliab., 2011