Martin Rack

According to our database, Martin Rack authored at least 6 papers between 2015 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications.

Lucas Nyssens, M. Nabet, Martin Rack, Youssef Bendou, Sidina Wane, Jacques Sombrin, Jean-Pierre Raskin, Dimitri Lederer

IEEE Trans. Circuits Syst. I Regul. Pap., February, 2025

2023

Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI.

Youssef Bendou, Martin Rack, Dimitri Lederer, Andreia Cathelin, Jean-Pierre Raskin

Proceedings of the 21st IEEE Interregional NEWCAS Conference, 2023

2021

Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI.

Martin Rack, Lucas Nyssens, Quentin Courte, Dimitri Lederer, Jean-Pierre Raskin

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC Applications.

Quentin Courte, Martin Rack, M. Nabet, Pieter Cardinael, Jean-Pierre Raskin

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates.

Pieter Cardinael, Sachin Yadav, Ming Zhao, Martin Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

2015

Through silicon via to FinFET noise coupling in 3-D integrated circuits.

A. Rouhi Najaf Abadi, W. Guo, X. Sun, K. Ben Ali, Jean-Pierre Raskin, Martin Rack, C. Roda Neve, M. Choi, V. Moroz, Geert Van der Plas, Ingrid De Wolf, Eric Beyne, Philippe P. Absil

Proceedings of the 2015 International Conference on IC Design & Technology, 2015