Toshihide Suzuki

According to our database, Toshihide Suzuki authored at least 16 papers between 2001 and 2018.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2018

A 120Gb/s 16QAM CMOS millimeter-wave wireless transceiver.

Korkut Kaan Tokgoz, Shotaro Maki, Jian Pang, Noriaki Nagashima, Ibrahim Abdo, Seitaro Kawai, Takuya Fujimura, Yoichi Kawano, Toshihide Suzuki, Taisuke Iwai, Kenichi Okada, Akira Matsuzawa

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers.

Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin

IEICE Trans. Electron., 2017

W-band ultra-high data-rate 65nm CMOS wireless transceiver.

Korkut Kaan Tokgoz, Shotaro Maki, Seitarou Kawai, Noriaki Nagashima, Yoichi Kawano, Toshihide Suzuki, Taisuke Iwai, Kenichi Okada, Akira Matsuzawa

Proceedings of the 22nd Asia and South Pacific Design Automation Conference, 2017

2016

300-GHz Amplifier in 75-nm InP HEMT Technology.

Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara

IEICE Trans. Electron., 2016

13.3 A 56Gb/s W-band CMOS wireless transceiver.

Korkut Kaan Tokgoz, Shotaro Maki, Seitaro Kawai, Noriaki Nagashima, Jun Emmei, Masato Dome, Hisashi Kato, Jian Pang, Yoichi Kawano, Toshihide Suzuki, Taisuke Iwai, Yuuki Seo, Kimsrun Lim, Shinji Sato, Ning Li, Kengo Nakata, Kenichi Okada, Akira Matsuzawa

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2015

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis.

Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara

IEICE Trans. Electron., 2015

2013

Submillimeter-wave InP HEMT amplifiers with current-reuse topology.

Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara

Proceedings of the 2013 IEEE Radio and Wireless Symposium, 2013

2012

A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors.

Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Yoichi Kawano, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa

IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2012

A fully integrated triple-band CMOS power amplifier for WCDMA mobile handsets.

Kouichi Kanda, Yoichi Kawano, Takao Sasaki, Noriaki Shirai, Tetsuro Tamura, Shigeaki Kawai, Masahiro Kudo, Tomotoshi Murakami, Hiroyuki Nakamoto, Nobumasa Hasegawa, Hideki Kano, Nobuhiro Shimazui, Akiko Mineyama, Kazuaki Oishi, Masashi Shima, Naoyoshi Tamura, Toshihide Suzuki, Toshihiko Mori, Kimitoshi Niratsuka, Shinji Yamaura

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2010

A 24 dB gain 51-68 GHz CMOS low noise amplifier using asymmetric-layout transistors.

Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa

Proceedings of the 36th European Solid-State Circuits Conference, 2010

2009

A 77GHz transceiver in 90nm CMOS.

Yoichi Kawano, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2008

60 and 77GHz Power Amplifiers in Standard 90nm CMOS.

Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2007

A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology.

Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Shinji Yamaura, Tsuyoshi Takahashi, Kozo Makiyama, Tatsuya Hirose

IEEE J. Solid State Circuits, 2007

2004

A 80-gbit/s D-type flip-flop circuit using InP HEMT technology.

Toshihide Suzuki, Tsuyoshi Takahashi, Tatsuya Hirose, Masahiko Takikawa

IEEE J. Solid State Circuits, 2004

2002

A 43-Gb/s full-rate-clock 4: 1 multiplexer in InP-based HEMT technology.

Yasuhiro Nakasha, Toshihide Suzuki, Hideki Kano, Kouji Tsukashima, Akio Ohya, Ken Sawada, Kozo Makiyama, Tsuyoshi Takahashi, Masahiro Nishi, Tatsuya Hirose, Masahiko Takikawa, Yuu Watanabe

IEEE J. Solid State Circuits, 2002

2001

A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs.

Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, Yuu Watanaba

IEEE J. Solid State Circuits, 2001