Toshihide Suzuki

According to our database1, Toshihide Suzuki authored at least 13 papers between 2007 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2018
A 120Gb/s 16QAM CMOS millimeter-wave wireless transceiver.
Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers.
IEICE Trans. Electron., 2017

W-band ultra-high data-rate 65nm CMOS wireless transceiver.
Proceedings of the 22nd Asia and South Pacific Design Automation Conference, 2017

2016
300-GHz Amplifier in 75-nm InP HEMT Technology.
IEICE Trans. Electron., 2016

13.3 A 56Gb/s W-band CMOS wireless transceiver.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2015
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis.
IEICE Trans. Electron., 2015

2013
Submillimeter-wave InP HEMT amplifiers with current-reuse topology.
Proceedings of the 2013 IEEE Radio and Wireless Symposium, 2013

2012
A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci., 2012


2010
A 24 dB gain 51-68 GHz CMOS low noise amplifier using asymmetric-layout transistors.
Proceedings of the 36th European Solid-State Circuits Conference, 2010

2009
A 77GHz transceiver in 90nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2008
60 and 77GHz Power Amplifiers in Standard 90nm CMOS.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2007
A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology.
IEEE J. Solid State Circuits, 2007


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