Renan Trevisoli Doria

According to our database, Renan Trevisoli Doria authored at least 9 papers between 2012 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Temperature Analysis of Schottky Diodes Rectifiers for Low-Power RF Energy Harvesting Applications.

Humberto Pereira Da Paz, Vinicius S. da Silva, Renan Diniz, Renan Trevisoli, Carlos Eduardo Capovilla, Ivan Roberto Santana Casella

IEEE Access, 2023

Optimizing RF Energy Harvesting Systems for IoT Applications using Reinforcement Learning.

Lícia S. C. Lima, Renan Trevisoli, Ricardo Suyama, Ivan R. S. Casella, Rodrigo Trevisoli Doria, Carlos Eduardo Capovilla

Proceedings of the Symposium on Internet of Things, 2023

Moving Beyond VHDL in Introductory Computer Architecture Courses: An Exploration of MyHDL as a Modern Alternative.

Rafael Corsi Ferrão, Igor dos Santos Montagner, Renan Trevisoli

Proceedings of the IEEE Frontiers in Education Conference, 2023

2022

Modeling Schottky Diode Rectifiers Considering the Reverse Conduction for RF Wireless Power Transfer.

Renan Trevisoli, Humberto Pereira Da Paz, Vinicius S. da Silva, Rodrigo Trevisoli Doria, Ivan R. S. Casella, Carlos Eduardo Capovilla

IEEE Trans. Circuits Syst. II Express Briefs, 2022

SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes.

Fernando J. Costa, Renan Trevisoli, Rodrigo Trevisoli Doria

Proceedings of the 13th IEEE Latin America Symposium on Circuits and System, 2022

2019

Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors.

Renan Trevisoli, Rodrigo Trevisoli Doria, Sylvain Barraud, Marcelo Antonio Pavanello

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2017

Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K.

Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello

Microelectron. Reliab., 2017

A new method for junctionless transistors parameters extraction.

Renan Trevisoli Doria, Rodrigo Trevisoli Doria, Michelly de Souza, Marcelo Antonio Pavanello, Sylvain Barraud

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2012

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices.

Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello

Microelectron. Reliab., 2012