Mikaël Cassé

According to our database, Mikaël Cassé authored at least 21 papers between 2009 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Noise modeling using look-up tables and DC measurements for cryogenic applications.

Giovani Britton, Salvador Mir, Estelle Lauga-Larroze, Benjamin Dormieu, Quentin Berlingard, Mikaël Cassé, Philippe Galy

Proceedings of the 31st IFIP/IEEE International Conference on Very Large Scale Integration, 2023

Transport characterization of CMOS-based devices fabricated with isotopically-enriched ²⁸Si for spin qubit applications.

G. Elbaz, Mikaël Cassé, V. Labracherie, G. Roussely, Benoit Bertrand, Heimanu Niebojewski, Maud Vinet, F. Balestro, Matias Urdampilleta, Tristan Meunier, Bruna Cardoso Paz

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature.

Quentin Berlingard, M. Moulin, J.-P. Michel, T. Fache, I. Charlet, C. Plantier, Z. Chalupa, Jose Lugo-Alvarez, Jean-Pierre Raskin, Louis Hutin, Mikaël Cassé

Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022

Specificities of linear Si QD arrays integration and characterization.

Heimanu Niebojewski, Benoit Bertrand, E. Nowak, Thomas Bedecarrats, Bruna Cardoso Paz, Lauriane Contamin, Pierre-André Mortemousque, V. Labracherie, L. Brevard, H. Sahin, Jean Charbonnier, C. Thomas, Myriam Assous, Mikaël Cassé, Matias Urdampilleta, Yann-Michel Niquet, François Perruchot, Fred Gaillard, Silvano De Franceschi, Tristan Meunier, Maud Vinet

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration.

Tadeu Mota Frutuoso, Xavier Garros, Perrine Batude, Laurent Brunet, Joris Lacord, Benoit Sklénard, V. Lapras, Claire Fenouillet-Béranger, M. Ribotta, A. Magalhaes-Lucas, J. Kanyandekwe, R. Kies, G. Romano, Edoardo Catapano, Mikaël Cassé, Jose Lugo-Alvarez, Philippe Ferrari, Fred Gaillard

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K.

Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration.

Tadeu Mota Frutuoso, Jose Lugo-Alvarez, Xavier Garros, Laurent Brunet, Joris Lacord, Louis Gerrer, Mikaël Cassé, Edoardo Catapano, Claire Fenouillet-Béranger, François Andrieu, Fred Gaillard, Philippe Ferrari

Proceedings of the IEEE International Reliability Physics Symposium, 2021

Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors.

Michelly de Souza, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello

Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

MOS technology for quantum computing: recent progress and perspectives for scaling up.

Louis Hutin, Benoit Bertrand, Heimanu Niebojewski, Pierre-André Mortemousque, Mikaël Cassé, Gérard Billiot, Xavier Jehl, Romain Maurand, Matias Urdampilleta, Yann-Michel Niquet, S. De Franceschi, Tristan Meunier, Maud Vinet

Proceedings of the Device Research Conference, 2021

2018

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).

Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K.

Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello

Microelectron. Reliab., 2017

Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices.

Jessy Micout, Quentin Rafhay, Xavier Garros, Mikaël Cassé, Jean Coignus, Luca Pasini, Cao-Minh Vincent Lu, Nils Rambal, Claire Fenouillet-Béranger, Laurent Brunet, G. Romano, R. Gassilloud, Perrine Batude, Maud Vinet, Gérard Ghibaudo

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016

Drain current model for short-channel triple gate junctionless nanowire transistors.

Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello

Microelectron. Reliab., 2016

Analog performance of strained SOI nanowires down to 10K.

Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model.

J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold

Proceedings of the 45th European Solid State Device Research Conference, 2015

2014

FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration.

Claire Fenouillet-Béranger, Bernard Previtali, Perrine Batude, F. Nemouchi, Mikaël Cassé, Xavier Garros, L. Tosti, Nils Rambal, Dominique Lafond, H. Dansas, L. Pasini, Laurent Brunet, Fabien Deprat, M. Gregoire, M. Mellier, Maud Vinet

Proceedings of the 44th European Solid State Device Research Conference, 2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, M. Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014

2013

Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs.

Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold

Proceedings of the European Solid-State Device Research Conference, 2013

Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations.

Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs.

Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2009

Process dependence of BTI reliability in advanced HK MG stacks.

Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger

Microelectron. Reliab., 2009