Seungbum Kim

According to our database, Seungbum Kim authored at least 10 papers between 2017 and 2026.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2026

Toward Enhanced Tracking of Small Airborne Objects Using Transformer-Based Particle Filter.

Jeonghun Lee, Sungwook Cho, Heemin Shin, Seungbum Kim

J. Aerosp. Inf. Syst., 2026

2025

Study on the Measurement Method of Interface Resistance in HBM-DRAM: Novel Monitoring Method for Bump Contact Resistance.

Sanghyeon Jeon, Ilgeun Jung, Seungjin Kim, Sangki Kim, Yangkeun Park, Seungbum Kim, Boyoung Song, Hyodong Ban

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

The NASA ISRO SAR (NISAR) Mission - Validation of Science Measurement Requirements.

Bruce Chapman, Giovanni Anconitano, Adrian A. Borsa, Alexandra Christensen, KC Cushman, Anup Das, Andrea Donnellan, Brandi Downs, Eric Fielding, Ben Holt, Ian Joughin, Josef Kellndorfer, Seungbum Kim, Kyle McDonald, Franz J. Meyer, Talib Oliver-Cabrera, Adriana Parra, C. Patnai, Annemarie Peacock, Naiara Pinto, Deepak Putrevu, Paul Rosen, Sassan Saatchi, Mark Simons, Paul Siqueira, Catalina Taglialatela, Ekaterina Tymofyeyeva, Adam Vaccaro, Rob Zinke, Simon Zwieback

Proceedings of the IGARSS 2024, 2024

2022

Recognition Accuracy Enhancement using Interface Control with Weight Variation-Lowering in Analog Computation-in-Memory.

Sangsu Park, Gyonhui Lee, Youngjae Kwon, Dong Ik Suh, Hanwool Lee, Sangeun Je, Dabin Kim, Dohan Lee, Seungwook Ryu, Seungbum Kim, Euiseok Kim, Sunghoon Lee, Kyoung Park, Seho Lee, Myung-Hee Na, Seonyong Cha

Proceedings of the IEEE International Memory Workshop, 2022

Towards Global Retrieval of Field-Scale Surface Soil Moisture Using L-Band Sar Data.

Seungbum Kim, Tienhao Liao

Proceedings of the IEEE International Geoscience and Remote Sensing Symposium, 2022

2021

Relationship Between Retrievals of Surface Soil Moisture and Roughness Using SAR Data at L-Band.

Seungbum Kim, Tienhao Liao

Proceedings of the IEEE International Geoscience and Remote Sensing Symposium, 2021

2019

A 512Gb 3-bit/Cell 3D 6^th-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.

Dongku Kang, Minsu Kim, Suchang Jeon, Wontaeck Jung, Jooyong Park, Gyo Soo Choo, Dong-Kyo Shim, Anil Kavala, Seungbum Kim, Kyung-Min Kang, Jiyoung Lee, Kuihan Ko, Hyun Wook Park, ByungJun Min, Changyeon Yu, Sewon Yun, Nahyun Kim, Yeonwook Jung, Sungwhan Seo, Sunghoon Kim, Moo Kyung Lee, Joo-Yong Park, James C. Kim, Young San Cha, Kwangwon Kim, Youngmin Jo, Hyun-Jin Kim, Youngdon Choi, Jindo Byun, Ji-hyun Park, Kiwon Kim, Tae-Hong Kwon, Young-Sun Min, Chiweon Yoon, Youngcho Kim, Dong-Hun Kwak, Eungsuk Lee, Wook-Ghee Hahn, Ki-Sung Kim, Kyungmin Kim, Euisang Yoon, Won-Tae Kim, Inryul Lee, Seunghyun Moon, Jeong-Don Ihm, Dae-Seok Byeon, Ki-Whan Song, Sangjoon Hwang, Kyehyun Kyung

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018

A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory.

Chulbum Kim, Doo-Hyun Kim, Woopyo Jeong, Hyun-Jin Kim, Il-Han Park, Hyun Wook Park, Jong-Hoon Lee, Jiyoon Park, Yang-Lo Ahn, Ji Young Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sanggi Hong, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung

IEEE J. Solid State Circuits, 2018

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput.

Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-Min Joe, Joonsuc Jang, Seungbum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Hanjun Lee, Min-Seok Kim, Seonyong Lee, SeonGeon Lee, Jinbae Bang, Dongjin Shin, Hwajun Jang, Deokwoo Lee, Nahyun Kim, Jonghoo Jo, Jonghoon Park, Sohyun Park, Youngsik Rho, Yongha Park, Hojoon Kim, Cheon An Lee, Chungho Yu, Young-Sun Min, Moosung Kim, Kyungmin Kim, Seunghyun Moon, Hyun-Jin Kim, Youngdon Choi, YoungHwan Ryu, Jinwon Choi, Minyeong Lee, Jungkwan Kim, Gyo Soo Choo, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Ki-Tae Park, Kyehyun Kyung

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.

Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sunghoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017