Shuting Shi

According to our database, Shuting Shi authored at least 6 papers between 2013 and 2021.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2021

Radiation Tolerant SRAM Cell Design in 65nm Technology.

JianAn Wang, Xue Wu, Haonan Tian, Lixiang Li, Shuting Shi, Li Chen

J. Electron. Test., 2021

Single Event Upset Evaluation for a 28-nm FDSOI SRAM Type Buffer in an ARM Processor.

Shuting Shi, Rui Chen, Rui Liu, Mo Chen, Chen Shen, Xuantian Li, Haonan Tian, Li Chen

J. Electron. Test., 2021

2018

Modeling and analysis of single-event transient sensitivity of a 65 nm clock tree.

Yuanqing Li, Li Chen, Issam Nofal, Mo Chen, Haibin Wang, Rui Liu, Qingyu Chen, Milos Krstic, Shuting Shi, Gang Guo, Sang H. Baeg, Shi-Jie Wen, Richard Wong

Microelectron. Reliab., 2018

2016

Layout-based Single Event Mitigation Techniques for Dynamic Logic Circuits.

Haibin Wang, Mulong Li, Xixi Dai, Shuting Shi, Li Chen, Gang Guo

J. Electron. Test., 2016

2014

Single-Event Transient Measurements on a DC/DC Pulse Width Modulator Using Heavy Ion, Proton, and Pulsed Laser.

Yi Ren, Anlin He, Shuting Shi, Gang Guo, Li Chen, Shi-Jie Wen, Richard Wong, N. W. van Vonno, Bharat L. Bhuva

J. Electron. Test., 2014

2013

Correlation of Heavy-Ion and Laser Testing on a DC/DC PWM Controller.

Yi Ren, Shuting Shi, Li Chen, Haibin Wang, L.-J. Gao, Gang Guo, Shi-Jie Wen, Richard Wong, N. W. van Vonno

J. Electron. Test., 2013